Chemically Engineered GaN Thin Films for Light-Stimulated Artificial Synapses

This dataset contains original PNG data from original research within the project EBEAM. Precisely, there are seven final, complex Figures below: Figure 1. Raman spectra a) and photoluminescence spectra b) for Si‐doped, Mg‐doped, and undoped GaN layers at ambient temperature Figure 2. EPSC characteristics of a) undoped, b) Mg‐doped, and c) Si‐doped GaN TFs. d) Schematic illustration of the synaptic device and the biological synapse. Inset graphs in (a–c) show the fitting curves using the Kohlrausch‐stretched exponential function. Each light excitation pulse lasts for 10 s under 360 nm wavelength light exposure, with an intensity of 1.33 mW cm−2, and a bias voltage of 0.01 V Figure 3. The energy band structures of EPSC phenomenon for different samples. a,c), and e) are the energy band diagrams of undoped, Mg‐doped, and Si‐doped GaN TFs under light stimulation, respectively. b,d), and f) are the energy band diagrams of undoped, Mg‐doped, and Si doped TFs without light stimulation, respectively. The rose–red ball and blue ball indicate the electron and hole, respectively. The green arrows signify the trapping and de‐trapping process, while transparent red and blue balls signify the disappeared electron and hole, respectively Figure 4. Photo response by two consecutive pulses data for a) undoped, b) Mg‐doped, and c) Si‐doped GaN TFs. d) PPF index at diverse time intervals Figure 5.  The transition from STM to LTM due to a) lighting duration, b) frequency, c) intensity, and d) pulse number for the Si‐doped GaN device Figure 6. a) The energy consumption associated with a single optical pulse. b) The use of continuous light pulses to replicate the learning and experience behavior of the human brain Figure 7. Modeling the dynamic encoding and decay processes of human visual memory   Funding:  This work was supported by the following: Gusu Talent (grant no. ZXL2021383) Suzhou Science and Technology Plan Project (grant no. ST202219) National Natural Science Foundation of China (grant no. 52071225) European Union’s Horizon EuropeResearch and Innovation Program under grant agreement no.101087143 (Electron Beam Emergent Additive Manufacturing(EBEAM))